Contact Us

Home   /   Contact

Keep In Touch With Us.

Location

Zhengzhou, China

Atomic Layer Deposition of Bismuth Vanadates for Solar

bismuth vanadates contain more deposited mass per of film thickness. SEM images reveal that the resulting films were rela-tively smooth and homogeneous in cross-section without ap-parent pinholes (Figure 1b). Compositional analysis by mass spectrometry identified the deposition of both vanadium and bismuth with a 2.01:1 ratio of V:Bi (Table 1).

Deposition of bismuth by Yersinia enterocolitica

Jul 01, 1992 Yersinia enterocolitica 808lc cultures in exponential growth were incubated for 1 h in 0.1 % microcrystalline bismuth subsalicylate (BSS) suspensions. Scanning electron microscopy (SEM) revealed microcrystals directly bound to BSS-treated bacteria. Energy dispersive spectroscopy (EDS) X-ray microanalysis of the attached microcrystals confirmed that the crystals were the microcrystalline

Tin, Bismuth, and Tin–Bismuth Alloy Electrodeposition from

Apr 13, 2017 The electrodeposition of tin, bismuth, and tin–bismuth alloys from Sn II and Bi III chlorometalate salts in the choline chloride/ethylene glycol (1:2 molar ratio) deep eutectic solvent was studied on glassy carbon and gold by cyclic voltammetry, rotating disc voltammetry, and chronoamperometry. The Sn II ‐containing electrolyte showed one voltammetric redox process

Electrochemical Depostion of Bismuth on Ruthenium and

section of the introductory chapter covers the preparative techniques used to clean electrodes for experimentation. Experimental data and conclusions regarding the deposition of bismuth on metallic ruthenium/ruthenium oxides, and a discussion of unfinished works and potential future projects are found in chapters 2 and 3, respectively.

Bismuth Solution Deposition Precursors Sigma-Aldrich

USA Home > Product Directory > Materials Science > Micro/NanoElectronics > Solution Deposition Precursors > Bismuth Materials Science Home Materials Science Products

Preparation and characterization of Bi2S3 thin films using

A modified chemical bath deposition method is used to deposit bismuth sulphide (Bi 2 S 3) thin films of thickness about 0.14 μm under optimized deposition conditions.The films are annealed at 200°C for 2h in air. It is found that deposited films turn from amorphous to polycrystalline after annealing.

Deposition of ZnO on bismuth species towards a

Deposition of ZnO on bismuth species towards a rechargeable Zn-based aqueous battery† JaeWook Shin,‡ Jung-Min You,‡ Jungwoo Z. Lee, Rajan Kumar, Lu Yin, Joseph Wang* and Y. Shirley Meng* Zn aqueous batteries typically suffer from poor cycle life because water soluble zincate ions are formed during the oxidation of Zn.

Deposition of bismuth by Yersinia enterocolitica

Yersinia enterocolitica 808lc cultures in exponential growth were incubated for 1 h in 0.1 % microcrystalline bismuth subsalicylate (BSS) suspensions. Scanning electron microscopy (SEM) revealed microcrystals directly bound to BSS-treated bacteria. Energy dispersive spectroscopy (EDS) X-ray microanalysis of the attached microcrystals confirmed that the crystals were the microcrystalline

Electrodeposition of bismuth from nitric acid electrolyte

Bismuth deposition was determined to be quasi-reversible on Au, with a current efficiency of 100%, based on integration of deposition and stripping voltammetric waves. and 2.0cm in length, a cross-section of a 1.0mm diameter gold wire sealed in epoxy, and a cross-section of a 0.8mm diameter tungsten wire sealed in glass. The gold wire and

Electrochemical deposition of bismuth telluride

Bismuth telluride and tellurium rich bismuth telluride wires of diameters of 35, 55, 73, and 200 nm and lengths of up to 50 microns were synthesized through constant current electrochemical deposition for thermoelectric applications.

Electrochemical Depostion of Bismuth on Ruthenium and

section of the introductory chapter covers the preparative techniques used to clean electrodes for experimentation. Experimental data and conclusions regarding the deposition of bismuth on metallic ruthenium/ruthenium oxides, and a discussion of unfinished works and potential future projects are found in chapters 2 and 3, respectively.

(PDF) Chemical Bath Deposition of Bismuth Chloride Oxide

Bismuth chloride oxide (BiClO) thin films were prepared on glass slide using chemical bath deposition from solutions of Bismuth Nitrate, triethanolamine (TEA), and potassium chloride with TEA as a

Bismuth nanowire growth under low deposition rate and its

Bi films were deposited on the silicon substrate by using a bismuth target (99.99 wt. %) as raw material. The deposition time is 40 min, the gas flow rate of Ar is 20 sccm, and the chamber pressure was varied from 0.15 to 0.24 Pa depending on the gas flow rate of N 2. The samples were taken out of the vacuum chamber after cooling down to

Deposition of ZnO on bismuth species towards a

Deposition of ZnO on bismuth species towards a rechargeable Zn-based aqueous battery† JaeWook Shin,‡ Jung-Min You,‡ Jungwoo Z. Lee, Rajan Kumar, Lu Yin, Joseph Wang* and Y. Shirley Meng* Zn aqueous batteries typically suffer from poor cycle life because water soluble zincate ions are formed during the oxidation of Zn.

Ex situ Deposited Bismuth Film on Screen‐Printed Carbon

Jul 01, 2010 DPASV measurements of Pb(II)-Cd(II)-Zn(II) system in 0.01 mol Là 1 KNO3 using a deposition potential of à 1.50 V, a deposition time of 60 s and a rest time of 5 s: (a) bismuth film coated screen-printed carbon electrode (BiSPCE) and (c) bismuth film electrode (BiFE); (b) and (d) show the resulting calibration plots using both BiSPCE and BiFE

High‐Performance Flexible Bismuth Telluride Thin Film from

4 Experimental Section Chemicals. Bismuth nitrate pentahydrate (Bi(NO 3) 3 ·5H 2 O, >99.9%), sodium tellurite For the post deposition thermal treatment, the films were typically annealed on a hot plate inside of an argon‐filled glove box at 300–400 °C (573 K–673 K) for 1 h.

Bismuth Wikipedia

Bismuth is a chemical element with the symbol Bi and atomic number 83. It is a pentavalent post-transition metal and one of the pnictogens with chemical properties resembling its lighter group 15 siblings arsenic and antimony.Elemental bismuth may occur naturally, although its sulfide and oxide form important commercial ores. The free element is 86% as dense as lead.

Underpotential‐Assisted Electrodeposition of Highly

Abstract In this work, the electrodeposition of smooth bismuth thin films was investigated. Bismuth is known for its peculiar magnetic, thermal and electrical properties but the deposition of a uni...

PREPARATION OF THIN FILMS BISMUTH SULFIDE BY

deposition method. The found procedure used easy handled precursors and reaction conditions were determined for aqueous solutions. To characterize the Bi 2 S 3 thin films were realized UV-vis spectroscopy, SEM, TEM, XRD and XPS. 2. Experimental In this section we will explain the developed recipe to elaborate the thin films of bismuth sulfide

US5306335A Electroless bismuth plating bath Google Patents

In an electroless plating bath containing bismuth trichloride, a reducing agent and complexing agents, stannous chloride is employed as the reducing agent to enable electroless plating of bismuth, which has generally been regarded as impossible. A preferable composition of the plating bath is 0.08M of bismuth trichloride, 0.34M of sodium citrate, 0.08M of EDTA, 0.20M of nitrilotriacetic acid

Bismuth Registration Dossier ECHA

The normal concentration of bismuth in blood is between 1 and 15µg/L, but absorption from oral preparations produces a significant rise. Transient peak plasma bismuth concentrations greater than 50 µg/L are observed 30-60 minutes after dosing with tripotassium dicitrato bismuthate in some patients, but are not associated with any toxic effects.

Deposition of bismuth by Yersinia enterocolitica

Yersinia enterocolitica 808lc cultures in exponential growth were incubated for 1 h in 0.1 % microcrystalline bismuth subsalicylate (BSS) suspensions. Scanning electron microscopy (SEM) revealed microcrystals directly bound to BSS-treated bacteria. Energy dispersive spectroscopy (EDS) X-ray microanalysis of the attached microcrystals confirmed that the crystals were the microcrystalline

(PDF) Chemical Bath Deposition of Bismuth Chloride Oxide

Bismuth chloride oxide (BiClO) thin films were prepared on glass slide using chemical bath deposition from solutions of Bismuth Nitrate, triethanolamine (TEA), and potassium chloride with TEA as a

Underpotential‐Assisted Electrodeposition of Highly

Abstract In this work, the electrodeposition of smooth bismuth thin films was investigated. Bismuth is known for its peculiar magnetic, thermal and electrical properties but the deposition of a uni...

Bismuth nanowire growth under low deposition rate and its

Bi films were deposited on the silicon substrate by using a bismuth target (99.99 wt. %) as raw material. The deposition time is 40 min, the gas flow rate of Ar is 20 sccm, and the chamber pressure was varied from 0.15 to 0.24 Pa depending on the gas flow rate of N 2. The samples were taken out of the vacuum chamber after cooling down to

Ex situ Deposited Bismuth Film on Screen‐Printed Carbon

Jul 01, 2010 DPASV measurements of Pb(II)-Cd(II)-Zn(II) system in 0.01 mol Là 1 KNO3 using a deposition potential of à 1.50 V, a deposition time of 60 s and a rest time of 5 s: (a) bismuth film coated screen-printed carbon electrode (BiSPCE) and (c) bismuth film electrode (BiFE); (b) and (d) show the resulting calibration plots using both BiSPCE and BiFE

It is desired to separate and determine bismuth, copper

It is desired to separate and determine bismuth, copper, and silver in a solution that is 0.0550 M in Bi0 +, 0.110 M in Cu2 2 +, 0.0962 M in Ag +, and 0.500 M in HClO 4, (a) Using 1.00 × 10-6 M as the criterion forquantitative removal, determine whether separation of the three species is feasible by controlled-potential electrolysis. (b) If any separations are feasible, evaluate the range

PREPARATION OF THIN FILMS BISMUTH SULFIDE BY

deposition method. The found procedure used easy handled precursors and reaction conditions were determined for aqueous solutions. To characterize the Bi 2 S 3 thin films were realized UV-vis spectroscopy, SEM, TEM, XRD and XPS. 2. Experimental In this section we will explain the developed recipe to elaborate the thin films of bismuth sulfide

Surface-Energy Induced Formation of Single Crystalline

bismuth deposition. We find that the higher substrate temperature increases the diameter and length of nanowires, respectively, to ∼200 nm and 20−30 μm at 323 K, and to ∼400 while its vertical cross section clearly indicates a porous and columnar structure (Figure 2a). In the top-view TEM image,

Structural and morphological behavior of bismuth thin

in bismuth and its compounds has increased tremendously during the last decade [8]. Up to now, many papers on bismuth nanostructures synthesized by means of various techniques have been reported, such as thin films [9], nanowires [10], nanotubes [11], nanoplates [12], and nanobelts [13]. In particular, bismuth thin film deposition is

Bismuth Wikipedia

Bismuth is a chemical element with the symbol Bi and atomic number 83. It is a pentavalent post-transition metal and one of the pnictogens with chemical properties resembling its lighter group 15 siblings arsenic and antimony.Elemental bismuth may occur naturally, although its sulfide and oxide form important commercial ores. The free element is 86% as dense as lead.

Investigation of Perovskite Solar Cells Employing Chemical

Different deposition cycles (Fig. 2) are chosen, using the optimized substrate temperature of 80 °C. The total deposition time has been set to 5 h for each sample and the layer thicknesses of the samples have been measured to be in the range of 200 nm. Figure 2: SEM pictures of MBI films at different deposition

US5368896A Electroless bismuth plating bath Google Patents

In an electroless plating bath containing bismuth trichloride, a reducing agent and complexing agents, stannous chloride is employed as the reducing agent to enable electroless plating of bismuth, which has generally been regarded as impossible. A preferable composition of the plating bath is 0.08M of bismuth trichloride, 0.34M of sodium citrate, 0.08M of EDTA, 0.20M of nitrilotriacetic acid

Atomic vapor deposition of bismuth titanate thin films

Atomic vapor deposition of bismuth titanate thin films Nitin Deepak, Panfeng F. Zhang, Lynette Keeney, Martyn E. Pemble, and Roger W. Whatmore EXPERIMENTAL SECTION A. Growth of Bi 4Ti 3O 12

Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced

a remote plasma source (PicoPlasma). Prior to each deposition the substrates were thoroughly rinsed with Millipore water and dried in a nitrogen flow (99.998%). To minimize nucleation delays on the native SiO 2 in the initial stages of Bi 2 O 3 deposition, 35 cycles of Al 2 O 3 were deposited with ALD prior to growth of the bismuth oxide